NEC Tests Verify Carbon Nanotube Enable Ultra High Performance Transistor; 10 Times Greater Transconductance Than Silicon Demonstrated
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NEC Tests Verify Carbon Nanotube Enable Ultra High Performance Transistor; 10 Times Greater Transconductance Than Silicon Demonstrated - JCN Newswire
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NEC Tests Verify Carbon Nanotube Enable Ultra High Performance Transistor; 10 Times Greater Transconductance Than Silicon Demonstrated

Tokyo, Sept 19, 2003 - (JCN Newswire) - NEC Corporation today announced development of stable fabrication technology for carbon nanotube (note 1) transistors. Through this development NEC verified that CNT transistors produced by using this fabrication technology attain more than 10 times greater transconductance (note 2) than silicon MOS transistors.

This result was achieved through the development of the following key technology.

(1) Development of chemical vapor deposition using a catalyst method that creates CNT growth from the position of the catalyst on the silicon substrate. This technology enables control of the CNT position on the silicon substrate whereas conventional fabrication processes cannot.

(2) Development of a process for the formation of electrodes which realizes low contact resistance between the electrodes and the CNT. This technology dramatically reduces the electric resistance between the CNT and the electrode contact parts.

Through the development of the above key technologies stable fabrication of CNT transistors was demonstrated. From the characterization of these transistors, it was also ascertained that it will be possible to achieve as much as 20 times greater transconductance as compared with silicon MOS transistors by removing the parasitic resistance between the electrodes (source and drain).

The results of this research hold great potential for CNT transistors as high-performance electrical devices supporting a future ubiquitous IT society. NEC will continue to work on advancements in CNT control technology, electric characteristic control, device structure design, and fabrication process development with the aim of realizing a CNT transistor by 2010.

This result will be announced at the 2003 International Conference on Solid State Devices and Materials being held from September 16 to 18 in Tokyo. Japan Fine Ceramics Center (JFCC) and the New Energy and Industrial Technology Development Organization (NEDO) commissioned this research as a part of the Nanocarbon Application Product Creation Technology Project.

Note 1:
CNT is nanometer sized carbon crystal with a cylindrical structure that was discovered by Dr. Sumio Iijima in 1991. The electrical and physical characteristics that the material possesses are attracting great attention, and fundamental and applied research are being pro-actively carried out. Despite its small diameter, large electric currents can be passed through a CNT. It is predicted, in regards to applications in the electronics field, that it will create greater electron velocity than silicon which is currently used in LSIs. It is expected that this will enable ultra high-speed operation when applied to the channel part of the transistor.

Note 2:
Transconductance is an index to measure the performance of a transistor. It shows how large a change in output drain current is obtained as a result of a change in input gate voltage. The larger this value the greater the operation speed of the transistor.

About NEC Corporation

NEC Corporation (TSE: 6701) is a leader in the integration of IT and network technologies that benefit businesses and people around the world. By providing a combination of products and solutions that cross utilize the company's experience and global resources, NEC's advanced technologies meet the complex and ever-changing needs of its customers. NEC brings more than 100 years of expertise in technological innovation to empower people, businesses and society. For more information, visit NEC at http://www.nec.com.

Contact:

Diane Foley
NEC Corporation
+81-3-3798-6511
E-mail:d-foley@ax.jp.nec.com
 


Sept 19, 2003
Source: NEC Corporation

NEC Corporation (TSE: 6701) (FTSE: NEC.IL) (U.S: NIPNY)

From the Japan Corporate News Network
http://www.japancorp.net
Topic: Research and development
View more news from these Sectors: Electronics General, Electronics General


 
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