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Elpida Memory Develops 90 nm Silicon Wafer Process for High-Performance SDRAM
 

Tokyo, Dec 2, 2004 (JCN) - Elpida Memory has announced that is has developed a new 90 nm production process for high-performance DRAM products.

90 nm (or 0.09 micron) is the next-generation measurement for silicon wafer manufacturing, following 100 nm (or 0.10 micron). It will allow more silicon chips to be produced on a single wafer because the size of each chip is smaller, and it improves overall production efficiency.

Elpida's 90 nm process technology will first be applied to the production of high-performance 512 Megabit and 1 Gigabit DDR2 SDRAM products starting next year.

By Dale Hug Staff Writer

Copyright © 2014 JCN. All rights reserved. A division of Japan Corporate News Network KK.


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 Recent  Elpida Memory, Inc.  News  
  Elpida Develops 4Gb DDR3 SDRAM on 25nm Node  (Oct 10, 2011)
  Elpida Develops 2Gb DDR3 SDRAM on 30nm Process  (Oct 7, 2010)
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  Elpida Reacting Calmly to Taiwanese Government Plans  (July 31, 2009)
  Elpida First Company to Use Capital-boosting Program  (Apr 28, 2009)
  Elpida Sustains Record Loss  (Apr 9, 2009)
  Elpida Rolls Up Taiwan Semicon Foundry  (Mar 24, 2009)
  IRG Telecom, Media, and Technology Weekly Japan Market Review  (Feb 17, 2009)



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